Semiconductor device structure and methods of forming the same

ABSTRACT

An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature having a first thickness, a first dielectric material disposed adjacent the first conductive feature, and the first dielectric material has a second thickness greater than the first thickness. The structure further includes a second conductive feature disposed adjacent the first dielectric material, a first etch stop layer disposed on the first conductive feature, a second etch stop layer disposed on the first dielectric material, and a second dielectric material disposed on the first etch stop layer and the second etch stop layer. The second dielectric material is in contact with the first dielectric material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 17/187,343 filed Feb. 26, 2021, which is incorporated byreference in its entirety.

BACKGROUND

As the semiconductor industry introduces new generations of integratedcircuits (IC) having higher performance and more functionality, thedensity of the elements forming the ICs increases, while the dimensions,sizes and spacing between components or elements are reduced. In thepast, such reductions were limited only by the ability to define thestructures photo-lithographically, device geometries having smallerdimensions created new limiting factors. With decreasing semiconductordevice dimensions, improved semiconductor devices with reduced line toline leakage is needed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional side view of the stage of manufacturing thesemiconductor device structure, in accordance with some embodiments.

FIGS. 2A-2N are cross-sectional side views of various stages ofmanufacturing an interconnection structure, in accordance with someembodiments.

FIGS. 3A-3L are cross-sectional side views of various stages ofmanufacturing the interconnection structure, in accordance withalternative embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “over,” “on,” “top,” “upper” and the like, may be used hereinfor ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

FIG. 1 illustrates a stage of manufacturing a semiconductor devicestructure 100. As shown in FIG. 1 , the semiconductor device structure100 includes a substrate 102 having substrate portions 104 extendingtherefrom and source/drain (S/D) epitaxial features 106 disposed overthe substrate portions 104. The substrate 102 may be a semiconductorsubstrate, such as a bulk silicon substrate. In some embodiments, thesubstrate 102 may be an elementary semiconductor, such as silicon orgermanium in a crystalline structure; a compound semiconductor, such assilicon germanium, silicon carbide, gallium arsenic, gallium phosphide,indium phosphide, indium arsenide, and/or indium antimonide; othersuitable materials; or combinations thereof. Possible substrates 102also include a silicon-on-insulator (SOI) substrate. SOI substrates arefabricated using separation by implantation of oxygen (SIMOX), waferbonding, and/or other suitable methods. The substrate portions 104 maybe formed by recessing portions of the substrate 102. Thus, thesubstrate portions 104 may include the same material as the substrate102. The substrate 102 and the substrate portions 104 may includevarious regions that have been suitably doped with impurities (e.g.,p-type or n-type impurities). The dopants are, for example boron for ap-type field effect transistor (PFET) and phosphorus for an n-type fieldeffect transistor (NFET). The S/D epitaxial features 106 may include asemiconductor material, such as Si or Ge, a III-V compoundsemiconductor, a II-VI compound semiconductor, or other suitablesemiconductor material. Exemplary S/D epitaxial features 106 mayinclude, but are not limited to, Ge, SiGe, GaAs, AlGaAs, GaAsP, SiP,InAs, AlAs, InP, GaN, InGaAs, InAlAs, GaSb, AlP, GaP, and the like. TheS/D epitaxial features 106 may include p-type dopants, such as boron;n-type dopants, such as phosphorus or arsenic; and/or other suitabledopants including combinations thereof.

As shown in FIG. 1 , S/D epitaxial features 106 may be connected by oneor more semiconductor layers 130, which may be channels of a FET. Insome embodiments, the FET is a nanostructure FET including a pluralityof semiconductor layers 130, and at least a portion of eachsemiconductor layer 130 is wrapped around by a gate electrode layer 136.The semiconductor layer 130 may be or include materials such as Si, Ge,SiC, GeAs, GaP, InP, InAs, InSb, GaAsP, AlinAs, AlGaAs, InGaAs, GaInP,GaInAsP, or other suitable material. In some embodiments, eachsemiconductor layer 130 is made of Si. The gate electrode layer 136includes one or more layers of electrically conductive material, such aspolysilicon, aluminum, copper, titanium, tantalum, tungsten, cobalt,molybdenum, tantalum nitride, nickel silicide, cobalt silicide, TiN, WN,WCN, TiAl, TiTaN, TiAlN, TaN, TaCN, TaC, TaSiN, metal alloys, othersuitable materials, and/or combinations thereof. In some embodiments,the gate electrode layer 136 includes a metal. A gate dielectric layer134 may be disposed between the gate electrode layer 136 and thesemiconductor layers 130. The gate dielectric layer 134 may include twoor more layers, such as an interfacial layer and a high-k dielectriclayer. In some embodiments, the interfacial layer is an oxide layer, andthe high-k dielectric layer includes hafnium oxide (HfO₂), hafniumsilicate (HfSiO), hafnium silicon oxynitride (HfSiON), hafnium aluminumoxide (HfAlO), hafnium lanthanum oxide (HfLaO), hafnium zirconium oxide(HfZrO), hafnium tantalum oxide (HMO), hafnium titanium oxide (HfTiO),lanthanum oxide (LaO), aluminum oxide (AlO), aluminum silicon oxide(AlSiO), zirconium oxide (ZrO), titanium oxide (TiO), tantalum oxide(Ta₂O₅), yttrium oxide (Y₂O₃), silicon oxynitride (SiON), hafniumdioxide-alumina (HfO₂—Al₂O₃) alloy, or other suitable high-k materials.

The gate dielectric layer 134 and the gate electrode layer 136 may beseparated from the S/D epitaxial features 106 by inner spacers 132. Theinner spacers 132 may include a dielectric material, such as SiON, SiCN,SiOC, SiOCN, or SiN. Spacers 128 may be disposed over the plurality ofsemiconductor layers 130. The spacers 128 may include a dielectricmaterial such as silicon oxide, silicon nitride, silicon carbide,silicon oxynitride, SiCN, silicon oxycarbide, SiOCN, and/or combinationsthereof. In some embodiments, a self-aligned contact (SAC) layer 140 isformed over the spacers 128, the gate dielectric layer 134, and the gateelectrode layer 136, as shown in FIG. 1 . The SAC layer 140 may includeany suitable material such as SiO, SiN, SiC, SiON, SiOC, SiCN, SiOCN,AlO, AlON, ZrO, ZrN, or combinations thereof.

A contact etch stop layer (CESL) 118 and an interlayer dielectric (ILD)layer 120 are disposed over the S/D epitaxial features 106, as shown inFIG. 1 . The CESL 118 may include an oxygen-containing material or anitrogen-containing material, such as silicon nitride, silicon carbonnitride, silicon oxynitride, carbon nitride, silicon oxide, siliconcarbon oxide, the like, or a combination thereof. The materials for theILD layer 120 may include tetraethylorthosilicate (TEOS) oxide, un-dopedsilicate glass, or doped silicon oxide such as borophosphosilicate glass(BPSG), fused silica glass (FSG), phosphosilicate glass (PSG), borondoped silicon glass (BSG), and/or other suitable dielectric materials. Acap layer 122 may be disposed on the ILD layer 120, and the cap layer122 may include a nitrogen-containing material, such as SiCN.

Conductive contacts 126 may be disposed in the ILD layer 120 and overthe S/D epitaxial features 106, as shown in FIG. 1 . The conductivecontacts 126 may include one or more electrically conductive material,such as Ru, Mo, Co, Ni. W, Ti, Ta, Cu, Al, TiN and TaN. Silicide layers124 may be disposed between the conductive contacts 126 and the S/Depitaxial features 106.

As shown in FIG. 1 , the semiconductor device structure 100 may includethe substrate 102 and a device layer 200 disposed over the substrate102. The device layer 200 may include one or more devices, such astransistors, diodes, imaging sensors, resistors, capacitors, inductors,memory cells, combinations thereof, and/or other suitable devices. Insome embodiments, the device layer 200 includes transistors, such asnanostructure transistors having a plurality of channels wrapped aroundby the gate electrode layer, as described above. The term nanostructureis used herein to designate any material portion with nanoscale, or evenmicroscale dimensions, and having an elongate shape, regardless of thecross-sectional shape of this portion. Thus, this term designates bothcircular and substantially circular cross-section elongate materialportions, and beam or bar-shaped material portions including for examplea cylindrical in shape or substantially rectangular cross-section. Thechannel(s) of the semiconductor device structure 100 may be surroundedby the gate electrode layer. The nanostructure transistors may bereferred to as nanosheet transistors, nanowire transistors,gate-all-around (GAA) transistors, multi-bridge channel (MBC)transistors, or any transistors having the gate electrode layersurrounding the channels. In some embodiments, the device layer 200includes planar FET, FinFET, complementary FET (CFET), forksheet FET, orother suitable devices.

FIGS. 2A-2N are cross-sectional side views of various stages ofmanufacturing an interconnection structure 300, in accordance with someembodiments. As shown in FIG. 2A, the interconnection structure 300includes a dielectric layer 302, which may be an ILD layer or anintermetal dielectric (IMD) layer. In some embodiments, the dielectriclayer 302 may be disposed over the ILD layer 120 (FIG. 1 ). In someembodiments, the dielectric layer 302 may be disposed on the cap layer122 (FIG. 1 ). The dielectric layer 302 may include one or moreconductive features (not shown) disposed therein. The dielectric layer302 may include an oxygen-containing material, such as silicon oxide orfluorine-doped silicate glass (FSG); a nitrogen-containing material,such as silicon nitride, silicon oxynitride (SiON), SiOCN, SiCN; a low-kdielectric material (e.g., a material having a k value lower than thatof the silicon oxide); a carbon-containing material, such as SiC, SiOC,or any suitable dielectric material. The dielectric layer 302 may beformed by chemical vapor deposition (CVD), atomic layer deposition(ALD), spin-on, physical vapor deposition (PVD) or other suitableprocess.

As shown in FIG. 2A, a glue layer 304, a conductive layer 306, an etchstop layer 308, and a mask layer 310 are formed over the dielectriclayer 302. In some embodiment, the glue layer 304 is formed on thedielectric layer 302, the conductive layer 306 is formed on the gluelayer 304, the etch stop layer 308 is formed on the conductive layer306, and the mask layer 310 is formed on the etch stop layer 308. Insome embodiments, the glue layer 304 is not present, and the conductivelayer 306 is formed on the dielectric layer 302. The glue layer 304 mayinclude Si, SiO, SiN, SiCN, SiON, SiOC, one or more metal nitrides, oneor more metals, or other suitable material that can provide adhesionbetween the conductive layer 306 and the dielectric layer 302 and theconductive features (not shown) formed therein. The glue layer 304 maybe formed by any suitable process, such as PVD, CVD, or ALD. The gluelayer 304 may have a thickness ranging from about 5 Angstroms to about200 Angstroms.

The conductive layer 306 may include an electrically conductivematerial, such as Cu, Co, Ru, Mo, Cr, W, Mn, Rh, Ir, Ni, Pd, Pt, Ag, Au,Al, Ta, TaN, TiN, alloys thereof, or other suitable material. In someembodiments, the conductive layer 306 includes a metal. The conductivelayer 306 may be formed by any suitable process, such as PVD, CVD,electroplating, or ALD. The etch stop layer 308 may include Si, SiO,SiN, SiC, SiON, SiOC, one or more metal nitrides, one or more metaloxides, or other suitable material. The etch stop layer 308 includes amaterial different from the material of the conductive layer 306. Theetch stop layer 308 may be formed by any suitable process, such as PVD,CVD, or ALD.

The mask layer 310 may include one or more metals, such as Cu, Co, Ru,Mo, Cr, W, Mn, Rh, Ir, Ni, Pd, Pt, Ag, Au, Al, Ta, Ti, or other suitablemetal. In some embodiments, the mask layer 310 includes a metal nitride.The mask layer 310 may be performed by any suitable process, such asPVD, CVD, electroplating, or ALD. The mask layer 310 may be a singlelayer or a multi-layer structure. The mask layer 310 may include amaterial different from the material of the conductive layer 306. Thus,the conductive layer 306, the etch stop layer 308, and the mask layer310 have different etch selectivity such that an etchant cansubstantially remove one layer but does not substantially affect theother two layers. The mask layer 310 may have a thickness ranging fromabout 30 Angstroms to about 1000 Angstroms.

As shown in FIG. 2B, one or more openings are formed in the mask layer310, the etch stop layer 308, the conductive layer 306, and the gluelayer 304, and a dielectric material 314 is formed in the openings andover the mask layer 310. In some embodiments, a liner 312 is firstformed in the openings and over the mask layer 310, and the dielectricmaterial 314 is formed on the liner 312. The openings may be formed byfirst patterning the mask layer 310 followed by transferring the patternof the mask layer 310 to the etch stop layer 308, the conductive layer306, and the glue layer 304. The patterning of the mask layer 310 andthe transferring of the pattern of the mask layer 310 may include one ormore etch process, such as dry etch, wet etch, or a combination thereof.In some embodiments, because the conductive layer 306, the etch stoplayer 308, and the mask layer 310 have different etch selectivity, threeetch processes are performed to form the openings. The openings separatethe conductive layer 306 into one or more portions, such as a pluralityof portions. In some embodiments, each portion of the conductive layer306 is a conductive feature, such as a conductive line.

In some embodiment, the etch process used to form the openings in theconductive layer 306 is a plasma etch process. The plasma etch processmay utilize inductively coupled plasma (ICP), capacitively coupledplasma (CCP), or remote plasma. The etchant used in the plasma etchprocess may include CH₄, CHF₃, CH₂F₂, CHF₃, C₄F₈, C₄F₆, CF₄, H₂, HBr,CO, CO₂, O₂, BCl₃, Cl₂, N₂, He, Ne, Ar, or combinations thereof. Theplasma etch process may be performed at a chamber pressure ranging fromabout 0.2 mT to about 120 mT and a processing temperature ranging fromabout 0 degrees Celsius to about 200 degrees Celsius. The plasma powermay range from about 50 W to about 3000 W, and a bias ranging from about0 V to about 1200 V may be applied. In some embodiments, the etchprocess used to form the openings in the conductive layer 306 is a wetetch process.

The liner 312 may include Si, SiO, SiN, SiC, SiON, SiOC, SiCN, SiOCN, orother suitable material. The liner 312 may be formed by any suitableprocess, such as ALD. The liner 312 may prevent diffusion of metal fromthe conductive layer 306 to the dielectric material 314, if theconductive layer 306 includes a metal that is susceptible to diffusion.In some embodiments, the liner 312 is omitted, if the conductive layer306 includes a metal that is not susceptible to diffusion. In someembodiments, the liner 312 also prevents oxidation of the conductivelayer 306 from the subsequent process to form the dielectric material314, which may be formed by using oxygen-containing precursor or in anoxygen-containing environment. The liner 312 may also protect lateraldimensions of the dielectric material 314 during subsequent processes.The liner 312 has a thickness ranging from about 5 Angstroms to about200 Angstroms. If the thickness of the liner 312 is less than about 5Angstroms, the liner 312 may not form a continuous layer, may not besufficient to prevent metal oxidation of the conductive layer 306,and/or may not be sufficient to prevent the diffusion of metal from theconductive layer 306 to the dielectric material 314. On the other hand,if the liner 312 is greater than about 200 Angstroms, manufacturing costmay be increased without significant advantage.

The dielectric material 314 may include SiC, SiO₂, SiOC, SiN, SiCN,SiON, SiOCN, a low-k dielectric material, such as SiCOH, or othersuitable material. The dielectric material 314 may be formed by anysuitable process, such as spin-on, CVD, ALD, or PVD. The dielectricmaterial 314 includes a material different from the material of theliner 312, and the dielectric material 314 and the liner 312 havedifferent etch selectivity such that an etchant can substantially removeone but does not substantially affect the other.

As shown in FIG. 2C, a planarization process may be performed to removea portion of the dielectric material 314 and the liner 312 formed overthe mask layer 310. The planarization process may be any suitableprocess, such as a chemical-mechanical polishing (CMP) process. As aresult of the planarization process, top surfaces 316 of the mask layers310 may be substantially co-planar with top surfaces 318 of thedielectric materials 314. The remaining dielectric material 314 may havea thickness ranging from about 30 Angstroms to about 3000 Angstroms. Thedielectric material 314 extends above the level of top surface of theetch stop layer 308 due to the presence of the mask layer 310. Thedielectric material 314 may be about 30 Angstroms to about 1000Angstroms above the level of the top surfaces of the etch stop layers308, which is defined by the thickness of the mask layer 310.

As shown in FIG. 2D, an etch stop layer 322 is formed on the topsurfaces 318 of the dielectric material 314 and on the liner 312. Theetch stop layer 322 may be selective formed on the dielectric topsurfaces 318 of the dielectric material 314 and on the liner 312 but noton the mask layers 310. The etch stop layer 322 may be formed by anyselective process. For example, a treatment process may be performed toactivate the metallic top surfaces 316 of the mask layers 310. Thetreatment process may be a plasma or non-plasma treatment process. Afterthe treatment process, a blocking layer (not shown) is selectivelyformed on the activated metallic top surfaces 316 of the mask layers310. The blocking layer may not be substantially formed on thedielectric top surfaces 318 of the dielectric material 314 and theliners 312. The blocking layer blocks the etch stop layer 322 fromsubstantially forming on the metallic top surfaces 316 of the mask layer310. The etch stop layer 322 may include Si, SiO, SiN, SiC, SiON, SiOC,metal nitride, metal oxide, or other suitable material. The etch stoplayer 322 may be formed by any suitable process, such as CVD, ALD, PVD,or spin-on. The etch stop layer 322 may have a thickness ranging fromabout 5 Angstroms to about 200 Angstroms. The etch stop layer 322 mayinclude the same or different material as the etch stop layer 308. Insome embodiments, the etch stop layers 308, 322 are both formed with adielectric material.

As shown in FIG. 2E, the mask layers 310 are removed. The removal of themask layers 310 may be performed by any suitable process, such as plasmaetch, non-plasma chemical etch, wet etch, or other suitable process. Theremoval of the mask layers 310 is selective, so the etch stop layer 322,the etch stop layers 308, and the liner 312 are not substantiallyaffected.

As shown in FIG. 2F, a dielectric material 324 is formed on the etchstop layers 308, 322, and a cap layer 326 is formed on the dielectricmaterial 324. The dielectric material 324 may include the same or adifferent material as the dielectric material 314 and may be formed bythe same or a different process as the dielectric material 314. The etchstop layers 308, 322 and the dielectric material 324 may includedifferent materials having different etch selectivity. An optional etchstop layer (not shown) may be embedded in the dielectric material 324.The cap layer 326 may include Si, SiO, SiN, SiC, SiON, SiOC, metalnitride, metal carbides, metal oxide, metal, or other suitable material.The cap layer 326 may be a single layer or a multi-layer structure. Thematerial(s) of the cap layer 326 is different from the material of thedielectric material 324. The cap layer 326 may be formed by any suitableprocess, such as CVD, PVD, ALD, or spin-on. The cap layer 326 may have athickness ranging from about 30 Angstroms to about 1000 Angstroms.

As shown in FIG. 2G, openings 328, 330 are formed in the cap layer 326and the dielectric material 324. The openings 328, 330 may be a resultof a dual-damascene process. For example, the opening 328 may be firstformed by patterning the cap layer 326 and transferring the pattern to aportion of the dielectric material 324. The optional etch stop layer(not shown) embedded in the dielectric material 324 may be utilized informing the opening 328. The opening 330 is then formed by covering aportion of a bottom of the opening 328. Thus, the opening 330 hassmaller dimensions than the opening 328. In some embodiments, theopening 330 is formed first, and the opening 328 is formed after theformation of the opening 330. In some embodiments, the opening 330 is avia and the opening 328 is a trench. The openings 328, 330 may be formedby any suitable processes, such as one or more etch processes. The etchprocesses also remove one etch stop layer 308 to expose a portion of theconductive layer 306, as shown in FIG. 2G.

As shown in FIG. 2G, discrete etch stop layers 308 are formed on theportions of the conductive layer 306, and discrete etch stop layers 322are formed on the dielectric materials 314. The discrete etch stoplayers 308 and the discrete etch stop layer 322 are formed at differentlevels. For example, the etch stop layers 322 are located at a levelhigher than the etch stop layers 308, and there are no etch stop layersdisposed on the vertical surfaces of the liner 312 to connect the etchstop layers 308, 322. If there are etch stop layers formed on thevertical surfaces of the liner 312, the one or more etch processes toform the opening 330 may not be able to completely remove the portionsof the etch stop layer formed at the bottom corners between the liner312 and the top surface of the conductive layer 306, leading to ashrinkage of the opening 330. Thus, without the etch stop layers formedon the vertical surfaces of the liner 312, the risk of the opening 330(i.e., via contact area) shrinkage is reduced.

In some embodiments, the opening 330 is aligned with a portion of theconductive layer 306, as shown in FIG. 2G. In some embodiments, theopening 330 is slightly misaligned with the portion of the conductivelayer 306, and a portion of the etch stop layer 322 is exposed, as shownin FIG. 2H. In some embodiments, the etch stop layer 322 includes amaterial different from the material of the etch stop layer 308. Thus,the etch process to remove the etch stop layer 308 does notsubstantially affect the etch stop layer 322 due to different etchselectivity. As a result, the opening 330 is not formed in thedielectric material 314. In some embodiments, a different etch processis performed to remove the exposed portion of the etch stop layer 322,and the dielectric material 314 and the liner 312 are exposed in theopening 330. In some embodiments, the etch stop layer 322 and the etchstop layer 308 are made from the same material, and the opening 330 maybe formed in the dielectric material 314. In one aspect, the etchprocess performed to remove the portions of the etch stop layer 308 andthe etch stop layer 322 does not substantially affect the dielectriclayer 314 and the liner 312. In another aspect, the etch processperformed to remove the portions of the etch stop layer 308 and the etchstop layer 322 also removes a portion of the liner 312 and thedielectric material 314. However, the opening 330 is not formed in thedielectric material 314 between adjacent portions of the conductivelayer 306 due to the higher level of the dielectric material 314. Theamount of the dielectric material 314 extending above the level of thetop surface of the etch stop layer 308 is defined by the thickness ofthe mask layer 310. Thus, if the thickness of the mask layer 310 is lessthan about 30 Angstroms, the opening 330 may be formed in the dielectricmaterial 314 between adjacent portions of the conductive layer 306,which leads to leakage concern and not enough RC benefit. On the otherhand, if the thickness of the mask layer 310 is greater than about 1000Angstroms, manufacturing cost may be increased without significantadvantage. With the reduced risk of forming the opening 330 in thedielectric material 314 between adjacent portions of the conductivelayer 306, reliability issues such as poor breakdown voltage or timedependent dielectric breakdown may occur as a result of the line to lineleakage may be reduced.

As shown in FIG. 2I, in some embodiments, a corner rounding process maybe performed when there is misalignment between the opening 330 and thecorresponding portion of the conductive layer 306, in order to increasethe dimension of the subsequently formed conductive feature 332 (FIG.2O) in the opening 330. With the increased dimension of the conductivefeature 332 (FIG. 2O) in the opening 330, resistance may be reduced. Inaddition, the corner rounding process removes sharp corners in theopening 330 and provides the shaving profile of the opening 330, whichlead to improved gap-filling process performed subsequently. In someembodiments, the etch stop layer 308 and the etch stop layer 322 includethe same material, and one of the etch processes for forming the opening330 may remove the etch stop layer 308 and a portion of the etch stoplayer 322 when misalignment occurs. For example, while etching the etchstop layer 308, the etch stop layer 322 may be also removed, and theliner 312 and the dielectric material 314 may or may not besubstantially affected by the etch process, depending on the etchselectivity between the etch stop layers 308, 322 and the dielectricmaterial 314 and the liner 312. In some embodiments, the corner roundingprocess is performed by a single etch process. Alternatively, a suitableetch process may be utilized to remove the portion of the liner 312 andthe portion of the dielectric material 314. The etch process thatremoves the portion of the liner 312 and the portion of the dielectricmaterial 314 may be controlled so that a sidewall of the liner 312 formsan angle A with respect to the top surface of the portion of theconductive layer 306. The angle A may range from about 85 degrees toabout 140 degrees. With the angle A greater than about 90 degrees, suchas from about 95 degrees to about 140 degrees, the dimension of theopening 330 is increased compared to the opening 330 shown in FIG. 2H.In some embodiments, the sidewall of the liner 312 may not besubstantially flat, such as having a curved cross-sectional profile. Theangle A may be defined by a straight line from one end point of thesidewall of the liner 312 to the other end point of the sidewall of theliner 312 with respect to the top surface of the conductive layer 306.

In some embodiments, the etch stop layer 322 includes a materialdifferent from the material of the etch stop layer 308. Thus, the etchprocess that removes the etch stop layer 308 does not substantiallyaffect the etch stop layer 322. A different etch process may beperformed to remove the portion of the etch stop layer 322. The etchprocess that is used to remove the portion of the etch stop layer 322 ora different etch process may be used to remove the portion of the liner312 and the portion of the dielectric material 314 and may be controlledso that a sidewall of the liner 312 forms the angle A with respect tothe top surface of the portion of the conductive layer 306.

In some embodiments, the corner rounding process may be performed evenwith the opening 330 and the corresponding portion of the conductivelayer 306 being aligned, as shown in FIG. 2J. The corner roundingprocess may be the same as the corner rounding process described in FIG.2I. As a result, the sidewalls of the liner 312 form the angle A withrespect to the top surface of the portion of the conductive layer 306,and the dimension of the opening 330 is increased compared to theopening 330 shown in FIG. 2G.

As shown in FIGS. 2K-2N, a conductive feature 332 is formed in theopenings 328, 330. The conductive feature 332 may include a firstportion 334 disposed in the opening 328 and a second portion 336disposed in the opening 330. The conductive feature 332 may include anelectrically conductive material, such as a metal. For example, theconductive feature 332 includes Cu, Ni, Co, Ru, Ir, Al, Pt, Pd, Au, Ag,Os, W, Mo, alloys thereof, or other suitable material. The conductivefeature 332 may be formed by any suitable process, such aselectro-chemical plating (ECP), PVD, CVD, or PECVD. In some embodiments,the first portion 334 of the conductive feature 332 may be a conductiveline, and the second portion 336 of the conductive feature 332 may be aconductive via.

In some embodiments, the conductive feature 332 may include a barrierlayer (not shown). The barrier layer may include Co, W, Ru, Al, Mo, Ti,TiN, TiSi, CoSi, NiSi, Cu, TaN, Ni, or TiSiNi and may be formed by anysuitable process, such as PVD, ALD, or PECVD. In some embodiments, thebarrier layer may be a conformal layer formed by a conformal process,such as ALD.

As described above, the discrete etch stop layers 308, 322 disposed atdifferent levels reduces the risk of having portions of etch stop layerremain in the via bottom corners to prevent via contact area shrinkage.As compared with traditional conductive feature, the second portion 336of the conductive feature 332 may be confined by the extended dielectricmaterial 314, which can prevent the critical dimension (CD) enlargementissue as well as to prevent the electrical leakage issue. In addition,as shown in FIG. 2L, because the etch stop layer 322 has a differentetch selectivity compared to the etch stop layer 308, the second portion336 of the conductive feature 332 is not formed in the dielectricmaterial 314 if a misalignment occurs. Furthermore, the dielectricmaterial 314 extends above the level of the top surface of the etch stoplayer 308. Thus, even if the second portion 336 of the conductivefeature 332 is formed in the dielectric material 314, the second portion336 of the conductive feature 332 is not formed between adjacentportions of the conductive layer 306. As described above, with thecorner rounding process, the dimensions of the second portion 336 of theconductive feature 332 shown in FIGS. 2M and 2N are greater than thedimensions of the second portion 336 of the conductive feature 332 shownin FIGS. 2L and 2K, respectively.

As shown in FIGS. 2K-2N, the interconnection structure 300 includes afirst conductive feature (a portion of the conductive layer 306), adielectric material 314 disposed adjacent the first conductive feature,and a second conductive feature (a portion of the conductive layer 306)disposed adjacent the dielectric material 314. The etch stop layer 308is disposed on the first conductive feature, and the etch stop layer 322is disposed on the dielectric material 314 at a level higher than theetch stop layer 308. The dielectric material 324 is disposed on the etchstop layer 308 and the etch stop layer 322. In some embodiments, theliner 312 is disposed between the first conductive feature and thedielectric material 314 and between the second conductive feature andthe dielectric material 314. The liner 312 may be also disposed betweenthe dielectric material 314 and the dielectric layer 302. The liner 312may be in contact with the etch stop layer 308, the etch stop layer 322,and the dielectric material 324. In some embodiments, the liner 312 isalso in contact with the conductive feature 332. The liner 312 mayinclude a different material than the materials of the etch stop layers308, 322.

In some embodiments, the liner 312 is omitted. FIGS. 3A-3L arecross-sectional side views of various stages of manufacturing theinterconnection structure 300 without the liner 312, in accordance withalternative embodiments. As shown in FIG. 3A, after forming the openingsin the mask layer 310, the etch stop layer 308, the conductive layer306, and the glue layer 304, the dielectric material 314 is formed inthe openings. As shown in FIG. 3B, a planarization process is performed,and the etch stop layers 322 are selectively formed on the dielectricmaterial 314.

As shown in FIG. 3C, the mask layers 310 are removed. As a result, thediscrete etch stop layers 308 and the discrete etch stop layers 322 areformed at different levels due to the different thicknesses between theconductive layer 306 and the dielectric material 314. As shown in FIG.3D, the dielectric material 324 is formed on the etch stop layers 308,322, and the cap layer 326 is formed on the dielectric material 324. Asshown in FIGS. 3E-3H, the openings 328, 330 are formed in the cap layer326 and the dielectric material 324. In some embodiments, as shown inFIGS. 3G and 3H, the corner rounding process is performed, and thesidewall of the dielectric material 314 form the angle B with respect tothe top surface of the portion of the conductive layer 306. The angle Bmay range from about 85 degrees to about 140 degrees. With the angle Bgreater than about 90 degrees, such as from about 95 degrees to about140 degrees, the dimension of the opening 330 shown in FIGS. 3H and 3Gis increased compared to the opening 330 shown in FIGS. 3E and 3F,respectively.

As shown in FIGS. 3I-3L, the conductive feature 332 is formed in theopenings 328, 330. For example, in some embodiments, the interconnectionstructure 300 includes a first conductive feature (a portion of theconductive layer 306), a dielectric material 314 disposed adjacent thefirst conductive feature, and a second conductive feature (a portion ofthe conductive layer 306) disposed adjacent the dielectric material 314.The etch stop layer 308 is disposed on the first conductive feature, andthe etch stop layer 322 is disposed on the dielectric material 314 at alevel higher than the etch stop layer 308. The dielectric material 324is disposed on the etch stop layer 308 and the etch stop layer 322. Insome embodiments, dielectric material 314 may be in contact with theetch stop layer 308, the etch stop layer 322, and the dielectricmaterial 324, as shown in FIGS. 3I-3L. For example, the dielectricmaterial 314 may include a first sidewall and a second sidewall oppositethe first sidewall. The first sidewall of the dielectric material 314may be in contact with the glue layer 304, a portion of the conductivelayer 306, the etch stop layer 308, and the dielectric material 324. Thesecond sidewall of the dielectric material 314 may be in contact withthe glue layer 304, another portion of the conductive layer 306, and thesecond portion 336 of the conductive feature 332.

The present disclosure in various embodiments provides discrete etchstop layers 308 disposed on the portions of the conductive layer 306 anddiscrete etch stop layers 322 disposed on the dielectric material 314 ata higher level. Some embodiments may achieve advantages. For example,without the etch stop layers formed on the vertical surfaces of theliner 312 or the dielectric material 314, the risk of the opening 330(i.e., via contact area) shrinkage is reduced. Furthermore, thedielectric material 314 extending to a level higher than the etch stoplayer 308 prevents a conductive feature 332 from forming between theadjacent portions of the conductive layer 306, leading to reduced lineto line leakage when misalignment occurs.

An embodiment is an interconnection structure. The structure includes afirst conductive feature having a first thickness, a first dielectricmaterial disposed adjacent the first conductive feature, and the firstdielectric material has a second thickness greater than the firstthickness. The structure further includes a second conductive featuredisposed adjacent the first dielectric material, a first etch stop layerdisposed on the first conductive feature, a second etch stop layerdisposed on the first dielectric material, and a second dielectricmaterial disposed on the first etch stop layer and the second etch stoplayer. The second dielectric material is in contact with the firstdielectric material.

Another embodiment is a structure. The structure includes a firstconductive feature, a first dielectric material disposed adjacent thefirst conductive feature, a second conductive feature disposed adjacentthe first dielectric material, a first etch stop layer disposed on thefirst conductive feature, and a second etch stop layer disposed on thefirst dielectric material. The second etch stop layer is at a differentlevel as the first etch stop layer. The structure further includes afirst liner disposed between the first conductive feature and the firstdielectric material, and the first liner is in contact with the firstand second etch stop layers. The structure further includes a seconddielectric material disposed on the first etch stop layer and the secondetch stop layer, and the second dielectric material is in contact withthe first liner.

A further embodiment is a method. The method includes forming a firstetch stop layer on a conductive layer, forming a mask layer on the firstetch stop layer, and the mask layer comprises a metal. The methodfurther includes forming one or more openings in the mask layer, thefirst etch stop layer, and the conductive layer, forming a firstdielectric material in the one or more openings, and top surfaces of thefirst dielectric material and the mask layer are substantiallyco-planar. The method further includes selectively forming a second etchstop layer on the first dielectric material, removing the mask layer,and forming a second dielectric material on the first and second etchstop layers.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An interconnection structure, comprising: a first conductive featurehaving a first thickness; a first dielectric material disposed adjacentthe first conductive feature, wherein the first dielectric material hasa second thickness greater than the first thickness; a second conductivefeature disposed adjacent the first dielectric material; a first etchstop layer disposed on the first conductive feature; a second etch stoplayer disposed on the first dielectric material; and a second dielectricmaterial disposed on the first etch stop layer and the second etch stoplayer, wherein the second dielectric material is in contact with thefirst dielectric material.
 2. The interconnection structure of claim 1,wherein the first etch stop layer comprises a first material, and thesecond etch stop layer comprises a second material different from thefirst material.
 3. The interconnection structure of claim 1, furthercomprising a third conductive feature disposed in the second dielectricmaterial.
 4. The interconnection structure of claim 3, wherein the thirdconductive feature comprises a conductive line disposed on a conductivevia.
 5. The interconnection structure of claim 4, wherein the firstdielectric material comprises a first sidewall and a second sidewallopposite the first sidewall, wherein the first sidewall is in contactwith the second dielectric material.
 6. The interconnection structure ofclaim 5, wherein the first sidewall of the first dielectric material isin contact with the first conductive feature and the first etch stoplayer, and the second sidewall of the first dielectric material is incontact with the second conductive feature and the conductive via of thethird conductive feature.
 7. An interconnection structure, comprising: afirst conductive feature; a first dielectric material disposed adjacentthe first conductive feature; a second conductive feature disposedadjacent the first dielectric material; a first etch stop layer disposedon the first conductive feature; a second etch stop layer disposed onthe first dielectric material, wherein the second etch stop layer is ata different level as the first etch stop layer; a first liner disposedbetween the first conductive feature and the first dielectric material,wherein the first liner is in contact with the first and second etchstop layers; and a second dielectric material disposed on the first etchstop layer and the second etch stop layer, wherein the second dielectricmaterial is in contact with the first liner.
 8. The interconnectionstructure of claim 7, wherein the first etch stop layer comprises afirst material, and the second etch stop layer comprises a secondmaterial different from the first material.
 9. The interconnectionstructure of claim 7, wherein the first liner is disposed between thefirst dielectric material and the second conductive feature.
 10. Theinterconnection structure of claim 9, further comprising a thirdconductive feature disposed in the second dielectric material, whereinthe third conductive feature is in contact with a portion of the firstliner.
 11. The interconnection structure of claim 10, wherein theportion of the first liner forms an angle with respect to a top surfaceof the second conductive feature, wherein the angle ranges from about 85degrees to about 140 degrees.
 12. The interconnection structure of claim7, further comprising: a third dielectric material disposed adjacent thesecond conductive feature; a second liner disposed between the thirddielectric material and the second conductive feature; and a third etchstop layer disposed on the third dielectric material.
 13. Theinterconnection structure of claim 12, further comprising a fourth etchstop layer disposed on a top surface of the second conductive feature,wherein the fourth etch stop layer is in contact with the first liner.14. The interconnection structure of claim 13, further comprising athird conductive feature disposed in the second dielectric material,wherein the third conductive feature is in contact with the third etchstop layer, the fourth etch stop layer, and a portion of the secondliner.
 15. The interconnection structure of claim 14, wherein theportion of the second liner forms an angle with respect to the topsurface of the second conductive feature, and wherein the angle rangesfrom about 85 degrees to about 140 degrees.
 16. A method, comprising:forming a first etch stop layer on a conductive layer; forming a masklayer on the first etch stop layer; forming first and second openings inthe mask layer, the first etch stop layer, and the conductive layer,wherein the first and second openings separate the first etch stop layerinto a first portion, a second portion, and a third portion of the firstetch stop layer; forming a first dielectric material in the first andsecond openings; selectively forming a second etch stop layer on thefirst dielectric material, wherein the second etch stop layer comprisesa first portion formed on a portion of the first dielectric materialformed in the first opening and a second portion formed on a portion ofthe first dielectric material formed in the second opening, and thefirst and second portions of the second etch stop layer are spacedapart; removing the mask layer to expose the first etch stop layer; andforming a second dielectric material on the first and second etch stoplayers.
 17. The method of claim 16, wherein the second dielectricmaterial is in contact with top surfaces and side surfaces of the firstand second portions of the second etch stop layer.
 18. The method ofclaim 17, wherein the second dielectric material is in contact with topsurfaces of the first, second, and third portions of the first etch stoplayer.
 19. The method of claim 18, further comprising forming a liner inthe first and second openings, wherein the first dielectric material isformed on the liner.
 20. The method of claim 19, wherein the seconddielectric material is in contact with a portion of a side surface ofthe liner.